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| HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES FEATURES * HIGH ISOLATION VOLTAGE BV: 5kVr.m.s. MIN * HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 80 V MIN * HIGH CURRENT TRANSFER RATIO CTR: 300% TYP * HIGH SPEED SWITCHING tr = 3 s, tf = 5 s TYP * LOW COST * ISOLATED CHANNELS PER EACH PACKAGE PS2501-1,-2,-4 PS2501L-1,-2,-4 DESCRIPTION PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2501L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. APPLICATIONS Interface circuit for various instrumentations and control equipments * AC LINE / DIGITAL LOGIC * DIGITAL LOGIC / DIGITAL LOGIC * TWISTED PAIR LINE RECEIVER * TELEPHONE / TELEGRAPH LINE RECEIVER * HIGH FREQUENCY POWER SUPPLY FEEDBACK CONROL * RELAY CONTACT MONITOR * POWER SUPPLY MONITOR ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER SYMBOLS VF Diode IR C ICEO Transistor BVCEO BVECO CTR VCE (sat) R1-2 C1-2 tr tf PARAMETERS Forward Voltage, IF = 10 mA Reverse Current, VR = 5 V Junction Capacitance, V= 0, f = 1.0 MHz Collector to Emitter Dark Current, Vce = 80 V, IF = 0 Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0 Emitter to Collector Breakdown Voltage, IE = 100 A, IB = 0 Current Transfer Ratio 1, IF= 5 mA, VCE = 5 V Collector Saturation Voltage, IF = 10 mA, IC = 2 mA Isolation Resistance, VIN-OUT = 1.0 kV Isolation Capacitance, V = 0, f = 1.0 MHZ Rise Time 2, VCC = 10 V, IC = 2 mA, RL = 100 Fall Time 2, VCC = 10 V, IC = 2 mA, RL = 100 UNITS V A pF nA V V % V pF s s 40 7 80 1011 0.5 3 5 2.Test Circuit for Switching 43 PS2501-1, -2, -4 PS2501L-1, -2, -4 MIN TYP 1.17 50 100 60 9 300 600 0.3 MAX 1.4 5 Notes: 1. CTR rank (PS2501-1, PS2501L-1 only) K: 300 to 600 % L: 200 to 400 % M: 80 to 240 % D: 100 to 300 % H: 80 to 160 % W: 130 to 260 % Q: 100 to 200% N: 80 to 600 % Coupled 8 76 5 16 15 14 13 12 11 10 9 PULSE INPUT PW = 100 S Duty Cycle = 1/10 IF 1 4 VCC 2 3 VOUT 12 PS2501-1 1234 PS2501-2 1 2345678 PS2501-4 50 RL = 100 PS2501 - 1, -2, -4, PS2501L -1, -2, -4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS Diode IF VR PD/C PD IF (PEAK) PARAMETERS UNITS RATINGS PS2501-1 PS2501-2,4 PS2501L-1 PS2501L-2, 4 80 6 1.5 150 1 80 6 1.2 120 1 Forward Current mA Reverse Voltage V Power Dissipation Derating mW/C Power Dissipation mW/Ch Peak Forward Current (PW = 100 s, Duty Cycle 1%) A Transistor VCEO VECO IC PC/C PC Coupled BV TSTG TOPT TSOL PT Collector to Emitter Voltage V Emitter to Collector Voltage V Collector Current mA Power Dissipation Derating mW/C Power Dissipation mW/Ch Isolation Voltage 2 Storage Temperature Operating Temperature Lead Temperature (Soldering 10 s) Total Power Dissipation Vr.m.s. C C C mW/Ch 80 7 50 1.5 150 5000 -55 to +150 -55 to +100 260 250 80 7 50 1.2 120 5000 -55 to +150 -55 to +100 260 200 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and ouput. TYPICAL PERFORMANCE CURVES (TA = 25 C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation, PC (mW) 150 Diode Power Dissipation, PD (mW) PS2501-1 PS2501L-1 100 PS2501-2 PS2501-4 PS2501L-2 PS2501L-4 50 1.2 mW/C 1.5 mW/C PS2501-1 PS2501L-1 100 PS2501-2 PS2501-4 PS2501L-2 PS2501L-4 50 1.2 mW/C 1.5 mW/C 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature, TA (C) Ambient Temperature, TA (C) PS2501-1, -2, -4, PS2501L-1, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 50 60 70 COLLECTOR CURRENT vs. COLLETOR to EMITTER VOLTAGE 10 5 100 C 60 C 25 C 0 C -25 C Collector Current, IC (mA) Forward Current, IF (mA) 50 40 50 mA mA mA 1 0.5 -55 C 30 20 20 10 IF = 5mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current, ICEO (nA) 10000 COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 1000 Collector Current, IC (mA) VCE = 80 V VCE = 40 V VCE = 24 V VCE = 10 V VCE = 5 V 50 mA 20 mA 10 mA 5 mA 2 mA 5 100 IF = 1 mA 1 0.5 10 1 -50 -25 0 25 50 75 100 0.1 0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature, TA (C) Collector Saturation Voltage, VCE sat (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 1.2 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 450 400 350 300 250 200 150 100 50 0 CTR, Normalized Output Current 1.0 0.8 0.6 0.4 0.2 Normalized to 1.0 at TA = 25 C IF = 5 mA, VCE = 5 V -50 -25 0 25 50 75 100 0 Current Transfer Ratio, CTR (%) 0.05 0.1 0.5 1 5 10 50 Ambient Temperature, TA (C) Forward Current , IF (mA) PS2501-1, -2, -4, PS2501L-1, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 C) SWITCHING TIME vs. LOAD RESISTANCE 1000 IF = 5 mA VCC = 5 V TA = 25 C CTR 290% SWITCHING TIME vs. LOAD RESISTANCE 50 tf tf tr Switching Time, t (s) Switching Time,t (s) 10 100 ts td ts 10 1 tr td 1 Ic = 2 mA Vcc = 10 V TA = 25 C CTR 290% 0.1 10 50 100 500 1k 5k 10 k 100 500 1 k 5 k 10 k 50 k 100 k Load Resistance, RL () Load Resistance, RL ( ) FREQUENCY RESPONSE 1.2 LONG TERM CTR DEGRADATION CTR Degradation, (Relative Value) TYP. 1.0 0 IF = 5 mA VCE = 5 V TA = 25 C Voltage Gain, AV (dB) -5 0.8 IF = 5 mA TA = 25 C -10 0.6 -15 100 RL = 1 k -20 300 0.5 1 2 5 10 20 50 100 200 500 0.4 IF = 5 mA TA = 60 C 0.2 0 10 2 10 3 10 4 10 5 Frequency, f (KHz) Operating Time (h) PS2501-1, -2, -4, PS2501L-1, -2, -4 OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-line Package) PS2501-1 5.1 MAX 43 10.2 MAX PS2501-2 8 76 5 6.5 12 1. Anode 2. Cathode 3. Emitter 4. Collector 6.5 3.8 MAX 4.55 MAX. 2.8 MIN. 0.65 2.54 7.62 3.8 MAX 4.55 MAX 2.8 MIN 0.65 2.54 7.62 1234 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1.34 0.50 0.10 0.25 M 0 to 15 1.34 0.50 0.10 0.25 M 0 to 15 PS2501-4 20.3 MAX 16 15 14 13 12 11 10 9 6.5 1 2345678 3.8 MAX 4.55 MAX 2.8 MIN 0.65 0.50 0.10 1.34 2.54 7.62 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. Anode Cathode Emitter Collector 0.25 M 0 to 15 OUTLINE DIMENSIONS (Units in mm) Lead Bending Type (Gull-wing) PS2501L-1 5.1 MAX 43 10.2 MAX PS2501L-2 8 76 5 1234 12 7.62 2.54 3.8 MAX 6.5 0.05 to 0.2 0.9 0.25 1.34 0.10 0.25 M 9.60 0.4 1. Anode 2. Cathode 3. Emitter 4. Collector 3.8 MAX 7.62 2.54 6.5 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 0.05 to 0.2 0.9 0.25 1.34 0.10 0.25 M 9.60 0.4 PS2501L-4 20.3 MAX 16 15 14 13 12 11 10 9 7.62 2.54 3.8 MAX 6.5 0.05 to 0.2 1 2345678 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. Anode Cathode Emitter Collector 0.9 0.25 1.34 0.10 0.25 M 9.60 0.4 PS2501-1, -2, -4, PS2501L-1, -2, -4 OUTLINE DIMENSIONS (Units in mm) PS2501-1* PS2501L-1* 4.6 0.35 43 4.6 0.35 43 6.5 12 6.5 12 7.62 7.62 3.8 MAX 4.55 MAX 3.8 MAX 0.05 to 0.2 2.8 MIN 0.65 0.50 0.1 2.54 0 to 15 2.54 9.60 0.4 1.34 0.1 0.90 0.25 1.34 *These packages are manufactured using the new Phoenix manufacturing process, and are interchangeable with the standard PS2501-1 and PS2501L-1. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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